简基康, 郑毓峰, 马忠权, et al. 射频溅射Indium-Tin-Oxide薄膜的结构和光电性质[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2000, (3).DOI：
射频溅射Indium-Tin-Oxide薄膜的结构和光电性质
摘要
用磁控射频溅射方法制备 Indium- Tin- Oxide(ITO)薄膜
研究了基片温度对薄膜结构、光、电性质的影响 .基片温度 41 0°时
结晶最好
相应的电学性质最优
并且解释了电学性质随结构变化的微观原因 .样品在可见光谱区的平均透过率超过 80 %
受基片温度影响不大
确定薄膜的光能隙为 3.55ev
Abstract
Indium Tin Oxide thin films are prapared by rf sputtering.Dependence of structural
optical and electrical characteristics on the substrate temperature are investigated using X ray diffractometer
UV VIS spectrophotometer and Hall effect measurement system.The substrate temperature 410℃ is optimal and leads to the improvement of the grain structure
and an increase of mobility
carrier concentrtion
and conductivity of the films.The average optical transmittance of all films eceeds 80% in visible region
and is not affected by the substrate temperature.The band gap of films attained by Tauc plot is \$3.55ev.\$
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references
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