共溅射法制备Cu-In合金膜及电学性能分析

马忠权; 徐少辉; 郑毓峰; 简基康; 李冬来

您当前的位置：

首页 >

文章列表页 >

共溅射法制备Cu-In合金膜及电学性能分析

工程技术 | 更新时间：2026-01-21

- 共溅射法制备Cu-In合金膜及电学性能分析
- 共溅射法制备Cu-In合金膜及电学性能分析
- 新疆大学学报（自然科学版中英文） 2002年第1期
- 作者机构：
  
  新疆大学物理系,新疆大学物理系,新疆大学物理系,新疆大学物理系,新疆大学物理系新疆乌鲁木齐830046 ,新疆乌鲁木齐830046 ,新疆乌鲁木齐830046 ,新疆乌鲁木齐830046,新疆,乌鲁木齐,830046
- 作者简介：
- 基金信息：
  
  国家自然科学基金 (5 9862 0 0 2 );新疆维吾尔自治区自然科学基金 (970 91 8);地区自然科学基金的资助 (№ .9781 9)
- DOI：
  中图分类号： O484
- 纸质出版：2002
- 稿件说明：
移动端阅览
[1]马忠权,徐少辉,郑毓峰,简基康,李冬来.共溅射法制备Cu-In合金膜及电学性能分析[J].新疆大学学报(自然科学版),2002(01):1-5.

马忠权, 徐少辉, 郑毓峰, et al. 共溅射法制备Cu-In合金膜及电学性能分析[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2002, (1).
[1]马忠权,徐少辉,郑毓峰,简基康,李冬来.共溅射法制备Cu-In合金膜及电学性能分析[J].新疆大学学报(自然科学版),2002(01):1-5. DOI：

马忠权, 徐少辉, 郑毓峰, et al. 共溅射法制备Cu-In合金膜及电学性能分析[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2002, (1). DOI：

摘要

采用共溅射方法制备了 Cu-In合金膜

并讨论了 Cu-In合金膜的结构、电学性能以及溅射时间对 Cu-In合金膜的结构及电学性能的影响 .结果显示

Cu-In合金膜仅有单峰

多晶晶面间距不随着膜厚的增加而改变 .用费 -桑理论对 Cu-In合金薄膜的电学性质进行了分析

临界厚度的讨论结果表明

溅射 3～ 4min是面电阻的转变点

而电学参数分析也给出相同的结果

Abstract

The thin films of Cu In binary alloy have been prepared on glass substrate by means of d.c co sputtering techniques.Their microstructure and electric property are analyzed with X ray diffraction (XRD) and Hall effect measurement

respectively.The influence of sputtering time on the structure and electric property of the films is also discussed.The results show that a strongly preferential oriented polycrystalline grain exists and the distance of plans does not change with the thickness of the films.Fuchs Sondheimer theory is employ to elucidate the variation of sheet resistance.There is a critical thichness for sheet resistivity.

关键词

Keywords

references

StoltL,HedstromJ,KesslerJ,et al.ZnO/CdS/CuInSe2 thin-filmSolar cells with improved performance[J].ApplPhys lett,1993,62(6):597.

MarkusE Beck,MichaelCocivera.Thin-film copper indium diselenide prepared bySelenization of copperindium oxideformed by spray pyrolysis[J].ThinSolidFilms,1996,272:71.

ReddyM Sesha,RamakrishnaReddyK T,HassainO Md,ReddyP J.Investigations on polysrystallineCuGaTe2 thinfilms[J].ThinSolidFilms,1997,292:14.

SebastianP J,FernandezA M,SanchezA.RapidCommunicationFormation ofCuInSe2 thin films by selenizationemployingCVTG,of electroless depositedCu-In alloy[J].SolEnergyMaterSolCells,1995,39:55.

KatsumiKushiya,AkiraShimizu,AkiraYamada,MakotoKonagai.Development of high-efficiencyCuInxGa1- xSe2thin-film solar cells by selenization with elementalSeVapor inVacuum[J].JpnJApplPhys,1995,34:54.

TakeoNakano,Takehiro suznki,NoriyukiOhnuki,ShigeruBaba.Alloying and electrical properties of evaporatedCu-In bilayer thin films[J].ThinSolidFilms,1998,334:192.

DzionkC,MetznerH,HesslerS,MahnkeH E.Phase formation during the reactive annealing ofCu-In films inH2Satmosphere[J].ThinSolidFilms,1997,299:38.

SchmidtJ,RoscherH H,LabuschR.Preparation and properties ofCuInSe2 thin filmsProduced by selenization of co-sputteredCu-In films[J].ThinSoLidFilms,1994,251:116.

FrederickO ADURODIJA,JinsooSONG,SangD KIM,SeokK KIM,KyungH YOON.Characterization of cuInS2 thinfilms grown by close-spaed vapor sulfurization ofCo-sputteredCu-InAlloy precursors[J].JpnJApplPhys,1998,37:4248.

曲喜新,过璧君.薄膜物理[M].北京:电子工业出版社,1994.

杨邦朝,王文生.薄膜物理和技术[M].北京:电子科技大学出版社,1994.

陈国平.薄膜物理和技术[M].南京:东南大学出版社,1993

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

共溅射CdTe掺Nd薄膜的结构和电导性能