The radiation defects induced by 85MeV 19F ion of 2.4×1015/cm2 and 2.2×1016/cm2 in N-type GaP
and of 1.6×1016/cm2 in P-type InP are investigated by positron annihilation lifetime technique respectively. In irradiated N-type GaP
the monovacancies are created at both low and high fluence. and the concentration of defects gets higher as the fluence increases. For irradiated P-type InP
the defects are monovacancies
too.
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references
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