In Virtur of electron Paramagnetic resonance (EPR) technique

the defect EPR Spectram of MOS Capacitors

which are fabricated on (100) Si substructure

before and after the irradiation of electrons and protons have heen measured. The canges of central density of defect paramagnetism before and after irradiation of electron and proton were comparted. The results showed that the P(x) Central density with single unpaired spin electron had no obvious change

but the radiation induced neutral bulk defects

and P(x) defects arose only under electron irratiation and that the central density increased with electron irradiation flux(1). The analysis and discussion of the discrepant results underelectron and Proton irradiation are given