碲化镉纳米线的制备和生长机理分析

姜海涛; 郑毓峰; 简基康; 孙言飞; 陈艳华

您当前的位置：

首页 >

文章列表页 >

碲化镉纳米线的制备和生长机理分析

工程技术 | 更新时间：2026-01-21

- 碲化镉纳米线的制备和生长机理分析
- 碲化镉纳米线的制备和生长机理分析
- 新疆大学学报（自然科学版中英文） 2005年第4期
- 作者机构：
  
  新疆大学物理系材料实验室,新疆大学物理系材料实验室,北京航天航空大学理学院凝聚态物理中心,新疆大学物理系材料实验室,新疆大学物理系材料实验室乌鲁木齐830046 ,乌鲁木齐830046 ,北京100083 ,乌鲁木齐830046,乌鲁木齐,830046
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(50062002)
- DOI：
  中图分类号： TN304
- 纸质出版：2005
- 稿件说明：
移动端阅览
[1]姜海涛,郑毓峰,简基康,孙言飞,陈艳华.碲化镉纳米线的制备和生长机理分析[J].新疆大学学报(自然科学版),2005(04).

姜海涛, 郑毓峰, 简基康, et al. 碲化镉纳米线的制备和生长机理分析[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2005, (4).
[1]姜海涛,郑毓峰,简基康,孙言飞,陈艳华.碲化镉纳米线的制备和生长机理分析[J].新疆大学学报(自然科学版),2005(04). DOI：

姜海涛, 郑毓峰, 简基康, et al. 碲化镉纳米线的制备和生长机理分析[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2005, (4). DOI：

摘要

利用物理气相沉积方法

在S i衬底上制备了CdT e纳米线和纳米晶.X射线衍射(XRD)和扫描电子显微镜(SEM)研究表明所得产物为四方结构CdT e.CdT e纳米线的直径约20nm

长度约为几个微米

纳米晶粒径约为100 nm.分析了载流气体流速、温度等因素对过饱和度的影响

进而影响低维纳米材料的形貌结构.

Abstract

CdTe nanowires and nanocrystals were grown on the silicon substrates via physical vapor deposition.X-ray diffraction and scanning electron microscopy images show that the final products were tetragonal CdTe nanowires

which were about 20nm in diameter and up to several micrometers in length.The CdTe nanocrystals were about 100nm.We investigate the influence of substrate temperature and the flow rate of Ar on the degree of the super saturation

which affect the prevailing growth morphology of the low-dimension nanomaterial.

关键词

Keywords

references

Y ang P D,W u Y Y,F an R.Ignorgan ic Sem iconductor nanow ires[J].In ternation J N anosc ien,2002,1:1-39.

K im J R,So H M,park JW,K im J J,et a l.E lectrica l T ransport port properties of ind iv idua l ga llium n itride nanow iressyn thes ized by CVD m ethod[J].A pp l Phys L ett,2002,80:3548-3550.

M a D D,L ee C S,A u F C K,et a l.Sm a ll-D iam eter S ilicon N anow ire Surfaces[J].Sc ience,2003,299:1874-1877.

Lv R T,C ao C B,G uo Y J,et a l.P reparation of ZnS nanotubes v ia surfactan t m ice lle-tem p late induc ing reaction[J].JM ater Sc i,2004,39:1575-1578.

Huang M H,W Y Y,F e ick H,et a l.C ata lytic G row th of Z inc O x ide N anow ires by V apor T ransport[J],A dv M ater,2001,13:113-116.

Huang M H,M ao S,F e ick H,et a l.R oom-T em perature U ltrav io let N anow ire N ano lasers[J].Sc ience,2001,292:1892-1899.

G ao T,W ang T H,C ata lyst-A ss isted V apor-L iqu id-So lid G row th of S ing le-C rysta lN ano-be lts and T he ir Lum inescenceP roperties[J].J Phys Chem B,2004,108:20045-20049.

W u X C,T ao Y R.G row th of CdS nanow ires by phys ica l vapor depos ition[J].J C rysta l G row th,2002,242:309-312.

Lv R T,C ao C B,Zha i H Z,et a l.Syn thes is and Characterization of Sem iconductor Z inc Su lfide nanotubes by soft-tem p late m ethod[J].Ch inese Sc ience Bu lletin,2004,49(10):1005-1008.

Lv R T,C ao C B,Zha i H Z,et a l.G row th and Characterization of s ing le-crysta l ZnSe nanorods v ia surfactan t soft-tem p late m ethod[J].So lid S tate Comm un ication,2004,130:241-245.

X u D S,Sh i X S,G uo G L,et a l.E lectrochem i-C a l P reparation of CdSe N anow ire A rrays[J].J Phys Chem B,2000,104:5061-5063.

K um ar S,A de M,N ann T.Syn thes is and structura l M eta lastab ility of CdT e N anow ires[J].Chem Eur J,2005,11:2220-2224.

V o lkon Y,M itche ll S,G apon ik N,et a l.In-S itu O bservation of N anow ires G row th from Lum inescen t CdT eN anocrysta ls in a Phosphate Bu ffer So lu tion[J].Chem Phys Chem,2004,5:1600-1602.

W agner R S,E llisW C.V apor-L iqu id-So lid M echan ism of S ing le C rysta l G row th[J].A pp l Phys L ett,1964,4:89-90.

G ao P X,W ang Z L.Se lf-A ssem b led N anow ire-N anoribbon Junction A rrays of ZnO[J].J Phys Chem B,2002,106,12653-12658.

谢高阳.无机化学丛书[M].第九卷,北京:科学出版社,360.

张克从,张乐氵惠.晶体生长科学与技术(上册).凝聚态物理丛书[M].北京:科学出版社,1997.

翁臻培,周志朝,李中和.结晶学[M].北京:中国建筑工业出版社,1986.

W e im er A W.C arb ide,N itride and BorideM ateria ls Syn thes is and P rocess ing[M].Chapm an and H a ll,London,1998.

浏览量

279

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

近距离升华薄膜装置的研制及特性