GaAs掺Mn材料的局域电子结构和磁性

蔺何; 段海明; 张军

您当前的位置：

首页 >

文章列表页 >

GaAs掺Mn材料的局域电子结构和磁性

工程技术 | 更新时间：2026-01-21

- GaAs掺Mn材料的局域电子结构和磁性
- GaAs掺Mn材料的局域电子结构和磁性
- 新疆大学学报（自然科学版中英文） 2005年第4期
- 作者机构：
  
  新疆大学物理系,新疆大学物理系,新疆大学物理系新疆乌鲁木齐830046 ,新疆乌鲁木齐830046,新疆,乌鲁木齐,830046
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(10347010,10247010);新疆大学21世纪教研工程项目(20030106)
- DOI：
  中图分类号： O471
- 纸质出版：2005
- 稿件说明：
移动端阅览
[1]蔺何,段海明,张军.GaAs掺Mn材料的局域电子结构和磁性[J].新疆大学学报(自然科学版),2005(04).

蔺何, 段海明, 张军. GaAs掺Mn材料的局域电子结构和磁性[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2005, (4).
[1]蔺何,段海明,张军.GaAs掺Mn材料的局域电子结构和磁性[J].新疆大学学报(自然科学版),2005(04). DOI：

蔺何, 段海明, 张军. GaAs掺Mn材料的局域电子结构和磁性[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2005, (4). DOI：

摘要

运用原子团模型研究了稀磁半导体G aA s掺M n的局域电子结构和磁性

计算采用基于密度泛函理论的离散变分方法.计算结果表明M n原子磁矩随掺杂浓度没有明显的变化

磁矩的数值与实验符合的较好.在包含两个M n原子的体系中M n原子之间是铁磁性偶合

表明体系具有铁磁性基态

每个M n原子的磁矩与掺杂一个M n原子时相近.对于不同的掺杂浓度

M n原子与最近邻A s原子之间均为反铁磁偶合

M n原子的3d电子与A s原子的4p电子之间有很强的杂化.

Abstract

The local electronic structure and magnetic properties of diluted magnetic semiconductor(Ga

Mn)As has been studied by using Discrete Variational approach based on density functional theory.The magnetic moments per Mn atom change lightly with Mn concentration variation

and the value of magnetic moment is in good agreement with experiment.The coupling between Mn atoms in(Ga

Mn)As is found to be ferromagnetic

which indicates that our system has ferromagnetic grand state.For all doping concentrations

the coupling between Mn and the nearest neighbor As is found to be antiferromagnetic

and Mn 3d states hybridize strongly with As 4p states.

关键词

Keywords

references

O hno H.M ak ing N onm agnetic Sem iconductors F errom agnetic[J].Sc ience,1998,281:951-956.

B ergqv ist L,K orzhavy i P A.M agnetic and e lectron ic structure of(G a1-xM nx)A s[J].Phys R ev B,2003,67:205201(1)-205201(9).

Ja in M an ish,K ron ik L eeor.E lectron ic structure and sp in po larization of M n-con ta in ing d ilu te m agnetic III-Vsem iconductors[J].Phys R ev B,2001,64:245205(1)-245205(5).

C raco L,L aad M S.A b in itio description of the d ilu ted m agnetic sem iconductor G a1-xM nxA s:F errom agnetism,e lectron ic structure,and optica l response[J].Phys R ev B,2003,68:233310(1)-233310(4).

Y ang Zongx ian.E lectron ic structure ofM n on the G aA s(001)surface[J].Phys R ev B,1997,56(11):6727-6731.

Sanv ito S tefano.F irst-princ ip les study of the orig in and nature of ferrom agnetism in G a1-xM nxA s[J].Phys R ev B,2001,68:165206(1)-165206(13).

D ietl T,O hno H.Ho le-m ed iated ferrom agnetism in tetrahedra lly coord inated sem iconductors[J].Phys R ev B,2001,63:195205(1)-195205(21).

T akash i H ayash i,Y osh iak i H ash im oto.E ffect of low-tem perature annea ling on transport and m agnetism of d ilu tedm agnetic sem iconductor(G a,M n)A s[J].A pp l Phys L ett,2001,78(12):1691-1693.

Hohenberg P,K ohn W.Inhom ogeneous E lectron G as*[J].Phys R ev,1964,136(3B):864-871.

E llis D E,Pa in ter G S.D iscrete V ariationa lM ethod for the Energy-B and P rob lem w ith G enera l C rysta l Poten tia ls*[J].Phys R ev B,1970,2:2887-2898.

K ohn W,Sham L J.Se lf-Cons isten t Equations Includ ing Exchange and Corre lation E ffects[J].Phys R ev,1965,140(4A):1133-1138.

Sh ioda R,A ndo K.Loca l structures of III-V d ilu ted m agnetic sem iconductorsG a1-xM nxA s stud ied us ing ex tended x-ray-absorption fine structure[J].Phys R ev B,1998,58(3):1100-1102.

Su llivan JM,Bo ish in G I.C ross-sectiona l scann ing tunne ling m icroscopy ofM n-doped G aA s:T heory and experim en t[J].Phys R ev B,2003,68:235324(1)-235324(6).

T uom isto F,Pennam en K.G a Sub lattice D efects in(G a,M n)A s:T herm odynam ica l and K inetic T rends[J].PhysR ev L ett,2004,93(5):055505(1)-055505(4).

O hno H,M atsuku ta F.Sp in-dependen t tunne ling and properties of ferrom agnetic(G a,M n)A s(inv ited)[J].J A pp lPhys,1999,85(8):4277-4282.

O hno H,Shen A.(G a,M n)A s:A new d ilu ted m agnetic sem iconductor based on G aA s[J].A pp l Phys L ett,1996,69(3):363-365.

Sapega V F,M oreno M.E lectron ic structure of M n ions in(G a,M n)A s d ilu ted m agnetic sem iconductor[J].PhysR ev B,2002,66:075217(1)-075217(6).

A ndo K,H ayash i T.M agneto-optic effect of the ferrom agnetic d ilu ted m agnetic sem iconductor G a1-xM nxA s[J].JA pp l Phys,1998,83(11):6548-6550.

O h ldag H,So linus V.M agnetic m om en t ofM n in the ferrom agnetic sem iconductor(G a0.98M n0.02)A s[J].A pp l PhysL ett,2000,76:2928-2930.

M asaak i T anaka.Ep itax ia l ferrom agnetic th in film s and heterostructures of M n-based m eta llic and sem iconductingcom pounds on G aA s[J].Phys ica E,1998,2:372-380.

浏览量

171

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

A_nC₂(A=Fe,Co,Ni,Cu)团簇的密度泛函研究(英文)

硫掺杂铁基单原子催化剂结构与催化活性的密度泛函理论研究

团簇Co_3NiB₂的反应活性研究

V取代NiMn_2O₄温度依赖电子转移机制的密度泛函理论研究