射频前端组件强电磁辐射场效应预测方法

魏子鹏; 范丽思; 周行; 赵强

doi:10.13568/j.cnki.651094.651316.2019.09.01.0001

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射频前端组件强电磁辐射场效应预测方法

工程技术 | 更新时间：2026-01-21

- 射频前端组件强电磁辐射场效应预测方法
- 射频前端组件强电磁辐射场效应预测方法
- 新疆大学学报（自然科学版中英文） 2021年38卷第1期页码：112-116
- 作者机构：
  
  石家庄铁道大学电气与电子工程学院
- 作者简介：
- 基金信息：
  
  电磁环境效应国家级重点实验室基金项目（614220503030517）
- DOI：10.13568/j.cnki.651094.651316.2019.09.01.0001
  中图分类号： TN722.3;TN322.8
- 纸质出版：2021
- 稿件说明：
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[1]魏子鹏,范丽思,周行,等.射频前端组件强电磁辐射场效应预测方法[J].新疆大学学报(自然科学版)(中英文),2021,38(01):112-116.
[1]魏子鹏,范丽思,周行,等.射频前端组件强电磁辐射场效应预测方法[J].新疆大学学报(自然科学版)(中英文),2021,38(01):112-116. DOI： 10.13568/j.cnki.651094.651316.2019.09.01.0001.

DOI：10.13568/j.cnki.651094.651316.2019.09.01.0001.

摘要

通过对限幅器、低噪声放大器(Low Noise Amplifier

LNA)等射频前端组件及模块的物理和数值建模

分析高功率微波和电磁脉冲场对典型器件作用的物理过程与干扰、损伤机理

实现电磁辐射效应场线-器件协同仿真

为射频前端电路端口等敏感部位强电磁辐射效应预测提供技术支撑.论文利用理论分析、ADS仿真分析、注入实验以及失效分析方法开展了微波脉冲对双极型晶体管和低噪声放大器的效应研究.通过实验详细分析后可以确定低噪声放大器输出波形随注入功率增加的变化特性与仿真结果相符

获得了不同脉冲参数(包括脉宽、频率和脉冲个数)以及器件不同工作状态对LNA损伤功率的影响规律.最后

对比分析了半导体器件损伤前后的电特性.

Abstract

Through the physical and numerical modeling of RF front-end components and modules such as limiters and low noise amplifiers

the physical process and interference and damage mechanism of high power microwave and electromagnetic pulse fields on typical devices are analyzed

and the field-line-device co-simulation of electromagnetic radiation effects is realized

which provides technical support for the prediction of strong electromagnetic radiation effects in sensitive parts such as RF front-end circuit ports. The effects of microwave pulse on bipolar transistors and low noise amplifiers are studied by theoretical analysis

ADS simulation analysis

injection experiment and failure analysis. After detailed analysis of the experiment

it can be determined that the output waveform of LNA changes with the increase of injection power

which is consistent with the simulation results.The effects of different pulse parameters(including pulse width

frequency and number of pulses) and different working states of the device on the damage power of LNA are obtained. Finally

the electrical characteristics of semiconductor devices before and after damage are compared and analyzed.

关键词

Keywords

references

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