The implanted metal particles in CoMnNiO amorphous film can improve film conduction property by decreasering film resistivity.XRD pattern and spreading resistance measurement indicate that as implanting dose is increased

the film crystallization temperature decreases and the film resistivity decreases also.The mechanism of these phenomenon is thought to be a compensate effect of paralled connection of the high-conduction implanted layers and the amorphous multinetworksin the materal. Alter annealed and crystallized

the film forms spinel solid solutin.