共溅射法制备Cu-In合金膜及电学性能分析

马忠权; 徐少辉; 郑毓峰; 简基康; 李冬来

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共溅射法制备Cu-In合金膜及电学性能分析

更新时间：2026-01-21

- 共溅射法制备Cu-In合金膜及电学性能分析
- Journal of Xinjiang University (Natural Science Edition in Chinese and English) Issue 1, (2002)
- 作者机构：
  
  新疆大学物理系,新疆大学物理系,新疆大学物理系,新疆大学物理系,新疆大学物理系新疆乌鲁木齐830046 ,新疆乌鲁木齐830046 ,新疆乌鲁木齐830046 ,新疆乌鲁木齐830046,新疆,乌鲁木齐,830046
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484
- Published：2002
- 稿件说明：
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[1]马忠权,徐少辉,郑毓峰,简基康,李冬来.共溅射法制备Cu-In合金膜及电学性能分析[J].新疆大学学报(自然科学版),2002(01):1-5.

马忠权, 徐少辉, 郑毓峰, et al. 共溅射法制备Cu-In合金膜及电学性能分析[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2002, (1).
[1]马忠权,徐少辉,郑毓峰,简基康,李冬来.共溅射法制备Cu-In合金膜及电学性能分析[J].新疆大学学报(自然科学版),2002(01):1-5. DOI：

马忠权, 徐少辉, 郑毓峰, et al. 共溅射法制备Cu-In合金膜及电学性能分析[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2002, (1). DOI：

摘要

采用共溅射方法制备了 Cu-In合金膜

并讨论了 Cu-In合金膜的结构、电学性能以及溅射时间对 Cu-In合金膜的结构及电学性能的影响 .结果显示

Cu-In合金膜仅有单峰

多晶晶面间距不随着膜厚的增加而改变 .用费 -桑理论对 Cu-In合金薄膜的电学性质进行了分析

临界厚度的讨论结果表明

溅射 3～ 4min是面电阻的转变点

而电学参数分析也给出相同的结果

Abstract

The thin films of Cu In binary alloy have been prepared on glass substrate by means of d.c co sputtering techniques.Their microstructure and electric property are analyzed with X ray diffraction (XRD) and Hall effect measurement

respectively.The influence of sputtering time on the structure and electric property of the films is also discussed.The results show that a strongly preferential oriented polycrystalline grain exists and the distance of plans does not change with the thickness of the films.Fuchs Sondheimer theory is employ to elucidate the variation of sheet resistance.There is a critical thichness for sheet resistivity.

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references

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