用正电子湮没方法研究高能重离子辐照半导体InP

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用正电子湮没方法研究高能重离子辐照半导体InP

更新时间：2026-01-21

- 用正电子湮没方法研究高能重离子辐照半导体InP
- Journal of Xinjiang University (Natural Science Edition in Chinese and English) Issue 1, (2002)
- 作者机构：
  
  新疆大学物理系,新疆,乌鲁木齐,830008
- 作者简介：
- 基金信息：
- DOI：
  CLC： O571.6
- Published：2002
- 稿件说明：
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[1]黄龙.用正电子湮没方法研究高能重离子辐照半导体InP[J].新疆大学学报(自然科学版),2002(01):31-33.

黄龙. 用正电子湮没方法研究高能重离子辐照半导体InP[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2002, (1).
[1]黄龙.用正电子湮没方法研究高能重离子辐照半导体InP[J].新疆大学学报(自然科学版),2002(01):31-33. DOI：

黄龙. 用正电子湮没方法研究高能重离子辐照半导体InP[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2002, (1). DOI：

摘要

采用正电子湮没寿命谱方法

对 1 .6× 1 0 1 6 cm- 2注量的 85 Me V1 9F离子辐照 P型 In P单晶的微观缺陷进行了研究

在 3 0 0～ 1 0 2 3 K的温度范围内测量了正电子湮没寿命随退火温度的变化 .实验表明 :辐射在 In P中产生单空位缺陷

在退火过程中单空位相互聚合形成双空位 .单空位和双空位分别在 5 73 K和 72 3 K温度完全被退火

Abstract

The positron annihilation lifetime measurements have been performed to study the defects in P type InP irradiated by 85 MeV 19 F ions at the fluence of 1.6×10 16 cm\+ -2 as a function of annealing temperature from 300～1 023 K. The results show that the mono vacancies are created in the irradiated InP and they are converted to di vacancies by combination during annealing. The mono and di vacancies are annealed at 573 K

723 K respectively.

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references

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