近距离升华制备大晶粒CdTe掺Sb薄膜的结构性能研究

匡代洪; 郑毓峰; 侯娟; 孙言飞

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近距离升华制备大晶粒CdTe掺Sb薄膜的结构性能研究

更新时间：2026-01-21

- 近距离升华制备大晶粒CdTe掺Sb薄膜的结构性能研究
- Journal of Xinjiang University (Natural Science Edition in Chinese and English) Issue 3, (2006)
- 作者机构：
  
  新疆大学物理系,新疆大学物理系,新疆大学物理系,新疆大学物理系乌鲁木齐830046,乌鲁木齐830046,乌鲁木齐830046,乌鲁木齐,830046
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484.4
- Published：2006
- 稿件说明：
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[1]匡代洪,郑毓峰,侯娟,等.近距离升华制备大晶粒CdTe掺Sb薄膜的结构性能研究[J].新疆大学学报(自然科学版),2006(03):290-294.

匡代洪, 郑毓峰, 侯娟, et al. 近距离升华制备大晶粒CdTe掺Sb薄膜的结构性能研究[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2006, (3).
[1]匡代洪,郑毓峰,侯娟,等.近距离升华制备大晶粒CdTe掺Sb薄膜的结构性能研究[J].新疆大学学报(自然科学版),2006(03):290-294. DOI：

匡代洪, 郑毓峰, 侯娟, et al. 近距离升华制备大晶粒CdTe掺Sb薄膜的结构性能研究[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2006, (3). DOI：

摘要

采用近距离升华(Co lse-Spaced-Sub lim ation

CSS)技术制备纯CdT e薄膜.然后通过离子注入的方法对纯CdT e薄膜进行Sb(锑)掺杂及热处理

并利用XRD、SEM、紫外可见分光光度计及H a ll测试系统研究其结构

表面形貌和光电性能.结果表明

通过离子注入的方法在纯CdT e薄膜上掺杂Sb离子可以改善CdT e薄膜的结晶性能、并且明显提高了其电导特性

掺杂对CdT e薄膜的光能隙影响不大.

Abstract

The pure CdTe thin films were prepared by close space sublimation(CSS) method.Then they were doped with Sb element by the Ion implant technique and annealed.The films were characterized by x-ray diffraction(XRD)

scanning electron microscopy(SEM)

ultraviolet visible(UV) and the Hall effect measurement.The results show that the CdTe crystallinity become better with suitable doping concentration and the conductivity of CdTe films is dramatically improved by Sb-doped.Doping Sb has a little influence on optical gap energy for CdTe films.

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references

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