纯氮气反应溅射c-轴择优取向AIN薄膜的制备及性质研究

杨世才; 阿布都艾则孜·阿布来提; 简基康; 郑毓峰; 孙言飞; 吴荣

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纯氮气反应溅射c-轴择优取向AIN薄膜的制备及性质研究

更新时间：2026-01-21

- 纯氮气反应溅射c-轴择优取向AIN薄膜的制备及性质研究
- Journal of Xinjiang University (Natural Science Edition in Chinese and English) Vol. 26, Issue 4, Pages: 444-449(2009)
- 作者机构：
  
  新疆大学物理科学与技术学院
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484.1
- Published：2009
- 稿件说明：
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[1]杨世才,阿布都艾则孜·阿布来提,简基康,等.纯氮气反应溅射c-轴择优取向AIN薄膜的制备及性质研究[J].新疆大学学报(自然科学版),2009,26(04):444-449.

杨世才, 阿布都艾则孜·阿布来提, 简基康, et al. 纯氮气反应溅射c-轴择优取向AIN薄膜的制备及性质研究[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2009, 26(4): 444-449.
[1]杨世才,阿布都艾则孜·阿布来提,简基康,等.纯氮气反应溅射c-轴择优取向AIN薄膜的制备及性质研究[J].新疆大学学报(自然科学版),2009,26(04):444-449. DOI：

杨世才, 阿布都艾则孜·阿布来提, 简基康, et al. 纯氮气反应溅射c-轴择优取向AIN薄膜的制备及性质研究[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2009, 26(4): 444-449. DOI：

摘要

在纯氮气气氛、衬底温度为20℃至370℃的条件下

分别在硅(100)和石英衬底上沉积氮化铝薄膜.原子力显微镜图片表明:在不同衬底温度制备的薄膜表面平滑

均方根粗糙度为2.2～13.2nm.X射线衍射图谱表明:可以在衬底温度为180°条件下沉积出具有c-轴择优取向的纤锌矿氮化铝薄膜

衬底温度的增加有利于薄膜结晶性的改善.由紫外-可见光透射谱计算得到薄膜折射率为1.80～1.85

膜厚约为1μm、光学能隙为6.1eV.

Abstract

Aluminum nitride thin films were grown on Si(100) and quartz substrates using reactive magnetron sputtering deposition at the substrate temperatures from 20℃to 370℃in an ambient of pure nitrogen. The atomic force microscope images showed that the surfaces of the films deposited at different temperatures are smooth and the root mean square(RMS) roughnesses were from 2.2 to 13.2nm.The X-ray diffraction spectras showed that highly c-axis preferred wurtzite A1N films can be obtained at substrate temperature as low as 180℃and the crystallizability of AIN was improved with increasing substrate temperature.Optical band gap(Eg=6.1eV)

refractive indexs(1.80-1.85) and thickness(about 1μm) of the film can be calculated and obtained by using the ultraviolet-visible optical transmission spectrum.

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references

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