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中国科学院新疆物理研究所!乌鲁木齐 830011,中国科学院新疆物理研究所!乌鲁木齐 830011,中国科学院新疆物理研究所!乌鲁木齐 830011,中国科学院新疆物理研究所,乌鲁木齐,830011
Published:2000
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[1]沈良,宋世庚,贾锐,陶明德.BaTiO_3薄膜的Sol-gel法制备及对其介电特性的研究[J].新疆大学学报(自然科学版),2000(01):57-60.
沈良, 宋世庚, 贾锐, et al. BaTiO3薄膜的Sol-gel法制备及对其介电特性的研究[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2000, (1).
[1]沈良,宋世庚,贾锐,陶明德.BaTiO_3薄膜的Sol-gel法制备及对其介电特性的研究[J].新疆大学学报(自然科学版),2000(01):57-60. DOI:
沈良, 宋世庚, 贾锐, et al. BaTiO3薄膜的Sol-gel法制备及对其介电特性的研究[J]. Journal of Xinjiang University (Natural Science Edition in Chinese and English), 2000, (1). DOI:
以钛酸四丁酯和乙酸钡为主要原料,以乙二醇独甲醚为溶剂,采用溶胶凝胶法在(100)低阻硅片上制备了BaTiO-3薄膜电容,用XRD分析了该薄膜的结构,发现薄膜在硅片上取向生长,同时又对薄膜的介电性质进行研究,结果表明,薄膜的介电特性在高频范围内随频率的变化比较稳定并讨论了晶化温度对薄膜电容的影响
BaTiO-3 thin film were prepared on Si(100) substract by solgel technique using ethylene glycol monomethyl ether as solevnt
barium acetate and titanium tetrabutoxide as precursor.Xray diffraction were used to study structure
it shows that the polycrystalline BaTiO-3 thin film with some orientation were obtained.Their dielectric properties were measured
and the effect of the increasing crystalline temperature on the property were observed
that is increasing the capatiancy of the thin film.
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